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- W2088698049 abstract "Ion-assisted deposition is suitable for the formation of epitaxial Si films at high deposition rate and low substrate temperature. We demonstrate epitaxial deposition of Si films on (100)-oriented Si wafers using deposition rates up to 0.3 μm/min at deposition temperatures in the range of 500–650 °C. Hall-effect measurements show a majority carrier mobility of 200 cm2/V s at a hole concentration of 1.4×1017 cm−3 in our films. A minority carrier diffusion length of 4.5 μm is determined from quantum efficiency measurements in the epitaxially grown Si films." @default.
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- W2088698049 date "1998-06-08" @default.
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- W2088698049 title "Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition" @default.
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- W2088698049 doi "https://doi.org/10.1063/1.121519" @default.
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