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- W2088758768 abstract "The surface photovoltage technique is an attractive method for measuring the minority carrier diffusion length. It has the advantage of not requiring permanent sample contacts. It does require, however, an accurate knowledge of the absorption coefficient-wavelength relationship. This relationship is well known for single-crystal silicon. However, for polycrystalline silicon we find the single-crystal data not to be applicable over the wavelength range for SPV measurements. We observe nonlinear SPV plots when using the well known α-λ data. Depending on which portion of the plot is used for diffusion length determination, one can obtain very different diffusion lengths. By making SPV, short circuit current, and spectral response measurements and comparing theory with experiment, we find a new α-λ relationship which is dependent on the stress in the sample. Since this stress varies spatially, it is difficult to use one particular set of α-λ data for SPV interpretation. We can find the low wavelength range of SPV plots to be most suitable for diffusion length measurements." @default.
- W2088758768 created "2016-06-24" @default.
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- W2088758768 date "1993-08-01" @default.
- W2088758768 modified "2023-10-02" @default.
- W2088758768 title "Effect of wafer stress on surface photovoltage diffusion length measurements" @default.
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- W2088758768 doi "https://doi.org/10.1016/0038-1101(93)90195-v" @default.
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