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- W2088885745 abstract "Brewster-angle reflectometry (BAR) is employed in-situ for the first time for investigation of the silicon oxide/silicon system during photocurrent oscillations in fluorine containing solution. Combining ex-situ Brewster-angle analysis (BAA) and atomic force microscopy (AFM) shows oxide thickness variations between 4.8 and 13.8 nm. The anodic oxide etch rate amounts to 0.1 nm s−1 in contrast to 0.01 nm s−1 for native oxide. The ambient/anodic oxide interface roughness, σ, is 2 ± 0.2 nm while σ for the oxide/silicon interface varies between 1.0 and 1.9 nm. The photocurrent onset, preceding regular current oscillations, is accompanied by roughness changes at the silicon oxide/silicon interface. A quantitative analysis of the overall system by discerning roughness and surface layer contributions is presented." @default.
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- W2088885745 date "2007-09-01" @default.
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- W2088885745 title "Brewster-angle analysis of native and photoelectrochemically grown silicon oxide nanotopographies" @default.
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- W2088885745 doi "https://doi.org/10.1016/j.susc.2007.04.108" @default.
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