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• W2088892421 abstract "Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, and energy-dispersive x-ray analysis. Solid-phase regrowth is observed to occur similarly as in Pd/Ge contacts on GaAs or InP. The reaction starts at low temperatures with the formation of an amorphous Pd–In–Ga–As layer, which crystallizes at elevated temperatures yielding hexagonal Pd4In0.53Ga0.47As being first described in this work. At temperatures ≳250 °C, this phase decomposes due to epitaxial solid-phase regrowth of In0.53Ga0.47As and formation of Pd–Ge phases. The stable composition is reached at temperatures ≳350 °C with excess Ge diffused through top Pd–Ge to the contact interface and growing epitaxially on the semiconductor." @default.
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• W2088892421 date "1996-10-01" @default.
• W2088892421 modified "2023-09-26" @default.
• W2088892421 title "Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As" @default.
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• W2088892421 doi "https://doi.org/10.1063/1.363348" @default.
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