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• W2088898070 abstract "Abstract Thin PZT films are synthesized on platinized stainless steel substrates by radio frequency magnetron sputtering. Based on the results of X-ray diffractometry, field-emission scanning electron microscopy and analytical scanning/transmission electron microscopy with semi-quantitative elemental mapping using energy dispersive X-ray spectrum imaging and line-scanning, the post-annealing growth of perovskite phase in sputtered PZT films has been scrutinized as a function of film processing conditions. It is observed that working pressure, sputtering gas composition and post-annealing heating rate directly affect the phase transformation trend, film morphology, crystallographic orientation and ferroelectric properties of the PZT films. Development of a thin secondary phase/layer enriched with Fe and lean in Pb and oxygen at the PZT/Pt interface has been confirmed. Processing of films at a working pressure of ∼0.7 Pa with an argon/oxygen gas composition of 90:10 followed by a fast and short duration air-annealing at a temperature of ∼650 °C is found to be the most suitable conditions for growing (1 1 1)-oriented perovskite PZT films on platinized stainless steel substrates for which about ∼35 μC cm −2 remanent polarization and ∼125 kV cm −1 coercive field have been realized under an applied field of ∼300 kV cm −1 . Structural changes as a function of film processing conditions have been correlated with ferroelectric characteristics of the PZT films." @default.
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• W2088898070 date "2013-10-01" @default.
• W2088898070 modified "2023-09-22" @default.
• W2088898070 title "Influence of processing parameters on the growth characteristics and ferroelectric properties of sputtered PZT thin films on stainless steel substrates" @default.
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• W2088898070 doi "https://doi.org/10.1016/j.apsusc.2013.05.103" @default.
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