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• W2088922553 endingPage "2219" @default.
• W2088922553 startingPage "2215" @default.
• W2088922553 abstract "The Ge p-MOSFETs on (110) substrates using two-step implantation and NiGe contacts have been demonstrated. The record peak mobility of 528 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s of the (110) Ge device is measured by the spilt C-V method and can be further enhanced by proper stress. Ge p-FETs on (110) substrates have lower mobility enhancement than (100) devices under compressive strain along the channel. The peak mobility decreases with decreasing temperature due to impurity scattering. The larger density of interface states causes the larger threshold voltage shift from the room temperature to 100 K as compared with Si MOSFETs." @default.
• W2088922553 created "2016-06-24" @default.
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• W2088922553 date "2014-06-01" @default.
• W2088922553 modified "2023-10-16" @default.
• W2088922553 title "Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs" @default.
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• W2088922553 doi "https://doi.org/10.1109/ted.2014.2318083" @default.
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