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- W2088943485 abstract "We show that the extension of the widely studied GaMnAs system to quaternary ${text{Ga}}_{1ensuremath{-}text{x}}{text{Mn}}_{text{x}}{text{As}}_{1ensuremath{-}text{y}}{text{P}}_{text{y}}$ alloys allows to change and inverse the Mn doping induced uniaxial strain and thus the uniaxial magnetocrystalline anisotropy fields. In particular for typical Mn concentrations of $x=0.07$ the Mn dopant induced strain can be completely compensated by phosphorous alloying in the $y=0.06$ range and layers with both in-plane or out-of-plane easy axes of magnetizations with extremely low barriers for magnetization switching can be obtained." @default.
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- W2088943485 date "2010-01-14" @default.
- W2088943485 modified "2023-10-18" @default.
- W2088943485 title "Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys" @default.
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- W2088943485 doi "https://doi.org/10.1103/physrevb.81.041202" @default.
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