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• W2088961718 abstract "To determine the influence of interface type on the accumulation of damage and ion mixing in GaAs/AlxGa1−xAs heterostructures, the damage produced by ion implantation at 77 K in single-layer (GaAs/AlxGa1−xAs/GaAs) and double-layer (GaAs/AlxGa1−xAs/GaAs/ AlxGa1−xAs/GaAs) heterostructures has been investigated by using a combination of Rutherford backscattering spectrometry and transmission electron microscopy. In the single-layer geometry, the degree of disorder increases with depth and the mixing is greater at the AlxGa1−xAs on GaAs interface than at the GaAs on AlxGa1−xAs one. The damage distribution in the sample with the double-layer geometry was different in the two layers, but overall it was similar to that in the single-layer geometry. These trends were observed in samples with x=0.6 and 0.2. These results indicate that migration of charged defects due to the presence of an implantation-induced electric field is not responsible for the asymmetry in the damage accumulation across the layer, the interface disorder and ion mixing, and the initiation of amorphization at interfaces. Instead, these effects can be better understood in terms of the depth dependence of the density of cascade events." @default.
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• W2088961718 date "1996-10-15" @default.
• W2088961718 modified "2023-09-27" @default.
• W2088961718 title "Depth dependence of ion implantation damage in Al<i>x</i>Ga1−<i>x</i>As/GaAs heterostructures" @default.
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• W2088961718 doi "https://doi.org/10.1063/1.363395" @default.
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