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- W2089354948 abstract "Abstract We have investigated the concentration profiles of n-type Si wafers implanted with 6 MeV oxygen ions at 2 μA−2 to doses of 3 × 1017 and 1018 cm−2, and 1 MeV ions at 10 μA cm−2. Both the as-implanted and annealed samples have been characterized by secondary ion mass spectrometry. For the as-implanted samples, the O distribution is far from Gaussian, and the peak of the distribution shifts to greater depth as the dose increases. This shift is due to two effects: swelling of the silicon in the region of the peak, due to the formation of oxide, and reduction of the stopping power of the material in the region in which large numbers of vacancies are produced. In the 6 MeV as-implanted samples we have also observed a small peak in the concentration of O at ≈ 2 μm, roughly half of the projected range of the incident ions. We attribute this peak to precipitation of O at the depth at which large numbers of vacancies are produced but where the vacancy and interstitial peaks do not overlap. This peak disappears after annealing, and is not observed in the 1 MeV samples. We attribute this latter effect to heating produced by high implantation current in this case. After annealing, oxygen is segregated at the surface and near the peak of the initial distribution. This peak tends to become rectangular, and saturates in the 1018 cm−2 samples, indicating the formation of a stoichiometric SiO2 layer. However, a band of oxide precipitates is observed at slightly lesser depth. In addition there are silicon inclusion in the oxide, near both interfaces." @default.
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- W2089354948 date "1993-01-01" @default.
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- W2089354948 title "Concentration profiles of high dose MeV oxygen implanted silicon" @default.
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- W2089354948 doi "https://doi.org/10.1016/0168-583x(93)90697-5" @default.
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