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- W2089526955 abstract "Precursors for the direct liquid injection (DLI) metallorganic chemical vapor deposition (MOCVD) of Bi 4-x La x Ti 3 O 12 (BLT) thin films, Bi(phenyl) 3 [Bi(Ph) 3 ], Bi(2,2,6,6-tetramethylheptanedionate) 3 [Bi(tmhd) 3 ], La(tmhd) 2 -pentamethyldiethylenetriamine) [La(tmhd) 2 -PMDT], and Ti(dimethylaminoethoxide) 4 [Ti(dmae) 4 ] were characterized by Fourier transform infrared spectroscopy (FTIR), differential scanning calorimetry, and thermogravimetric analysis. The reactions among Bi, La, and Ti precursors in a single-mixture solution was identified using a 1 H-nuclear magnetic resonance spectrometer and it was shown that Bi(Ph) 3 was better than Bi(tmhd) 3 as a Bi precursor because Bi(tmhd) 3 reacted with Ti(dmae) 4 in the solvent. The gas phase decomposition temperatures of three precursors, Bi(Ph) 3 , La(tmhd) 3 -PMDT, and Ti(dmae) 4 were found with FTIR to be 400, 375, and 325°C, respectively. Evaporator temperature was optimized from the deposition rate of the single oxide from each precursor. The deposition behavior could be explained in terms of the precursor characteristics. Fatigue-free and highly c axis oriented BLT thin films were grown on Pt/TiO 2 /SiO 2 /Si at the deposition temperature of 400°C. For the BLT film annealed at 650°C, the remanent polarization (2P r ) and coercive field (E c ) were 12 μC/cm 2 and 56 kV/cm, respectively. The BLT capacitors did not show any significant fatigue up to 4 × 10 10 cycles at a frequency of 1 MHz." @default.
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- W2089526955 date "2003-01-01" @default.
- W2089526955 modified "2023-10-16" @default.
- W2089526955 title "Evaluation of Precursors for DLI MOCVD of Ferroelectric BLT" @default.
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- W2089526955 doi "https://doi.org/10.1149/1.1595661" @default.
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