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• W2089596301 abstract "We demonstrated the use of an in situ metal/high-k fabrication method for improving the performance of metal–insulator–semiconductor field-effect transistors (MISFETs). Gate-first pMISFETs with polycrystalline silicon (poly-Si)/TiN/HfSiON stacks were fabricated by techniques based on low-damage physical vapor deposition, in which high-quality HfSiON dielectrics were formed by the interface reaction between an ultrathin metal-Hf layer (0.5 nm thick) and a SiO2 underlayer, and TiN electrodes were continuously deposited on the gate dielectrics without exposure to air. Gate-first pMISFETs with high carrier mobility and a low threshold voltage (Vth) were realized by reducing the carbon impurity in the gate stacks and improving the Vth stability against thermal treatment. As a result, we obtained superior current drivability (Ion = 350 µA/µm at Ioff = 200 pA/µm), which corresponds to a 13% improvement over that of conventional chemical vapor deposition-based metal/high-k devices." @default.
• W2089596301 created "2016-06-24" @default.
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• W2089596301 date "2007-11-22" @default.
• W2089596301 modified "2023-10-16" @default.
• W2089596301 title "Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition BasedIn situMethod" @default.
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• W2089596301 doi "https://doi.org/10.1143/jjap.46.l1111" @default.
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