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• W2089778506 startingPage "13598" @default.
• W2089778506 abstract "Real-time spectroscopic ellipsometry (SE) and infrared attenuated total reflection spectroscopy (ATR) have been applied to investigate interface layer formation mechanisms in an $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ film on a c-Si substrate covered with native oxide (ensuremath{sim}30 AA{}) in a conventional rf plasma-enhanced chemical vapor deposition. These real-time monitoring techniques allow us to determine a depth profile of hydrogen content for the SiH and ${mathrm{SiH}}_{2}$ bonding states, together with the microscopic structural evolution during the $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ deposition. The analyses of these real-time measurements show the formation of a 35-AA{}-thick H-rich layer having an average hydrogen content of ensuremath{sim}17 at. % at the $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$/substrate interface. A deuterium diffusion experiment performed after a 130-AA{}-thick $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ deposition supports the H-rich layer formation at the interface. This interface layer formation is primarily caused by the H-rich three-dimensional island growth on the substrate in the early $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ deposition stage. In a following coalescence process, we found a significant reduction in the hydrogen content in $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ bulk layer, accompanied by a clear surface smoothening of the $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ layer. The above results indicate that surface diffusion of precursors promotes a dense $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ network formation during the coalescence and confines H-rich $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ islands at the film/substrate interface region." @default.
• W2089778506 created "2016-06-24" @default.
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• W2089778506 date "1999-11-15" @default.
• W2089778506 modified "2023-09-25" @default.
• W2089778506 title "Interface-layer formation mechanism in<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>a</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant=normal>S</mml:mi><mml:mi mathvariant=normal>i</mml:mi><mml:mo>:</mml:mo><mml:mi mathvariant=normal>H</mml:mi></mml:math>thin-film growth studied by real-time spectroscopic ellipsometry and infrared spectroscopy" @default.
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• W2089778506 doi "https://doi.org/10.1103/physrevb.60.13598" @default.
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