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- W2089910729 abstract "We report the electrical transport of the Si nanowires in a field-effect transistor (FET) configuration, which were synthesized from B-doped p-type Si(111) wafer by an aqueous electroless etching method based on the galvanic displacement of Si by the reduction of Ag^+ ions on the wafer surface. The FET performance of the as-synthesized Si nanowires was investigated and compared with Ag-nanoparticles-removed Si nanowires. In addition, high-k HfO2 gate dielectric was applied to the Si nanowires FETs, leading to the enhanced performance such as higher drain current and lower subthreshold swing." @default.
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- W2089910729 date "2010-11-01" @default.
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- W2089910729 title "Electrical transport properties in electroless-etched Si nanowire field-effect transistors" @default.
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- W2089910729 doi "https://doi.org/10.1016/j.mee.2010.04.015" @default.
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