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- W2089958958 abstract "N , N -bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide was applied to organic semiconductors for bottom-contact thin-film transistors. The carrier mobility was 1.6×10−2cm2V−1s−1, the threshold voltage (VT) was +5.5V, and the on/off current ratio was 8.6×105. Devices without any further surface treatments were tested in an ambient environment. The threshold voltage shift (ΔVT) was verified by gate bias stress measurements. A prototype compound, N,N-bis(4-trifluoromethylbenzyl)naphthalene-1,4,5,8-tetracarboxylic di-imide, shows direct correlation to the bottom-contact device with the varied molecular structure." @default.
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- W2089958958 date "2007-05-21" @default.
- W2089958958 modified "2023-09-24" @default.
- W2089958958 title "High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide" @default.
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- W2089958958 doi "https://doi.org/10.1063/1.2741414" @default.
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