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• W2089998632 abstract "Nanometer-scale pattern generation on III-V semiconductor substrates using a scanning tunneling microscope (STM) operating in air is demonstrated. The sample substrates, consisting of arsenic-capped, epitaxial layers of n-doped GaAs, AlxGa1−xAs and InyGa1−yAs were prepared by molecular beam epitaxy and characterized by time-of-flight secondary-ion mass spectrometry and x-ray photoelectron spectroscopy. The direct patterning of features of width ≤50 nm on GaAs and In0.2Ga0.8As surfaces is shown to be the result of the formation of a strongly bonded surface oxide induced under high electric field conditions existing between the scan tip and the substrate. The significance of STM pattern generation of nanometer-scale oxide masks for use in the fabrication of low-dimensional heterostructures is discussed." @default.
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• W2089998632 date "1991-10-01" @default.
• W2089998632 modified "2023-09-24" @default.
• W2089998632 title "Nanolithography on III-V semiconductor surfaces using a scanning tunneling microscope operating in air" @default.
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• W2089998632 doi "https://doi.org/10.1063/1.350345" @default.
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