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• W2090129598 abstract "We report on quantum dot (QD) lasers made of stacked InAs dots grown by metalorganic chemical vapor deposition. Successful growth of defect-free binary InAs/GaAs QDs with high lateral density (dl⩾4×1010 cm−2) was achieved in a narrow growth parameter window. The room-temperature photoluminescence (PL) intensity is enhanced up to a factor of 3 and the PL peak width is reduced by more than 30% when a thin layer of In0.3Ga0.7As is deposited onto the InAs QDs. A QD laser with a single sheet of such InAs/InGaAs/GaAs QDs exhibits threshold current densities as low as 12.7 and 181 A/cm2 at 100 and 300 K, respectively. Lasers with threefold stacked QDs show ground-state lasing and allow for cw operation at room temperature." @default.
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• W2090129598 date "1997-07-07" @default.
• W2090129598 modified "2023-10-16" @default.
• W2090129598 title "Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition" @default.
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• W2090129598 doi "https://doi.org/10.1063/1.120556" @default.
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