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- W2090214489 abstract "A n-channel metal/ferroelectric/polycrystalline silicon/insulator/silicon structure field effect transistor (FET) with a Pb(Zr0.52Ti0.48)O3 ferroelectric layer has been proposed and demonstrated. The Pb(Zr0.52Ti0.48)O3 ferroelectric layer (200nm) was deposited by radio frequency magnetron sputtering. The counterclockwise drain current–gate voltage (Id-Vg) hysteresis loops of the ferroelectric FET demonstrate the memory effect of the device. The counterclockwise hysteresis loops are attributed to the ferroelectric polarization of the Pb(Zr0.52Ti0.48)O3 film. The memory window measured from the Id-Vg characteristics is about 2.6V as the Vg sweeps between −5 and +5V. The endurance characteristics of the device have been investigated." @default.
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- W2090214489 date "2007-04-09" @default.
- W2090214489 modified "2023-10-12" @default.
- W2090214489 title "Fabrication and characteristics of a metal/ferroelectric/polycrystalline silicon/insulator/silicon field effect transistor" @default.
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- W2090214489 doi "https://doi.org/10.1063/1.2724896" @default.
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