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• W2090250551 abstract "We have used synchrotron-based high-resolution core-level photoemission and valence-band emission measurements to characterize hydrogen chemisorption on nonpolar GaAs(110) and polar GaAs(100) and GaAs(001) surfaces. Chemisorbed atomic hydrogen forms both Ga-H and As-H bonds on all three surfaces, causing chemical shifts of core-level binding energies and changing the valence-band emission. For low hydrogen exposures arsenic desorbs from all surfaces. However, at higher exposures, the (110) surface transforms into a Ga-rich structure with traces of metallic Ga, while the (100) surface transforms into an As-rich structure. We have also observed some additional changes in the binding energy of bulk components of Ga and As core levels as a function of hydrogen exposure, which may be explained by hydrogen-induced changes in band bending." @default.
• W2090250551 created "2016-06-24" @default.
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• W2090250551 date "2003-05-22" @default.
• W2090250551 modified "2023-09-27" @default.
• W2090250551 title "High-resolution photoemission study of hydrogen interaction with polar and nonpolar GaAs surfaces" @default.
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• W2090250551 doi "https://doi.org/10.1103/physrevb.67.195325" @default.
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