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- W2090282710 abstract "Grain-driven zone melting is a new method of recrystallizing polycrystalline silicon films. A liquid alloy zone driven by the free-energy difference between polycrystalline and single-crystal silicon migrates and converts a polycrystalline film of deposited silicon into a single crystal. Processing is carried out under isothermal conditions so that batch processing of silicon wafers in conventional diffusion furnaces is practicable. The liquid-zone velocity is determined from theory for various alloys, grain sizes, and temperatures. At a typical processing temperature of 800 °C, a polycrystalline Si film on a wafer 4 in. in diameter can be recrystallized in 1 h utilizing multiple zones. The stability of the liquid zone is related to its shape and orientation. Zone orientations for 〈111〉 and 〈100〉 wafers are derived which prevent the interfaces of the zone from breaking up. The morphology of the liquid zone is shown to be static, in practice, because of the extremely long times required for any shape change." @default.
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- W2090282710 date "1984-07-15" @default.
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- W2090282710 title "Grain-driven zone melting" @default.
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- W2090282710 doi "https://doi.org/10.1063/1.333935" @default.
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