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- W2090347308 abstract "In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations." @default.
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- W2090347308 date "2009-09-01" @default.
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- W2090347308 title "A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base" @default.
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- W2090347308 doi "https://doi.org/10.1088/1674-1056/18/9/063" @default.
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