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• W2090427052 abstract "This study reports the development of GaN-based power-chip light-emitting diodes (LEDs) with sidewall roughness using natural lithography with polystyrene spheres as the etching mask. At an injection current of , the LED with sidewall roughness increased the light output intensity of the multiple quantum well LEDs by a factor of 1.26, indicating that the LED with sidewall roughness had larger light extraction efficiency. The wall-plug efficiency of GaN-based LED was increased by 26.5% with sidewall roughness. After life test, it was found that normalized output power of power-chip LED with sidewall roughness did not show any significant degradation." @default.
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• W2090427052 date "2007-01-01" @default.
• W2090427052 modified "2023-10-18" @default.
• W2090427052 title "Efficiency Enhancement of GaN-Based Power-Chip LEDs with Sidewall Roughness by Natural Lithography" @default.
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• W2090427052 doi "https://doi.org/10.1149/1.2402489" @default.
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