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• W2090429552 abstract "A corona discharge is used to create and store negative charge in the silicon nitride films of silicon dioxide/silicon nitride stacks. Effective lifetime measurements on both textured and planar, as well as both boron diffused and undiffused silicon samples passivated with silicon oxide/silicon nitride stacks, show that the creation of negative charge in the nitride layer results in an improvement in the surface passivation for all samples, with very low (&lt;2 cm/s) effective surface recombination velocities demonstrated for planar, undiffused samples. The manipulation of charge can be exploited to improve the conversion efficiency of silicon solar cells." @default.
• W2090429552 created "2016-06-24" @default.
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• W2090429552 date "2009-02-09" @default.
• W2090429552 modified "2023-10-16" @default.
• W2090429552 title "Improved silicon surface passivation achieved by negatively charged silicon nitride films" @default.
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• W2090429552 doi "https://doi.org/10.1063/1.3077157" @default.
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