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• W2090435831 abstract "The off-lattice displacement of B atoms in B-doped Si induced by the irradiation with light ion beam at room temperature has been investigated. A proton beam with energy ranging from 300 to 1300 keV was used to irradiate the single crystal Si samples containing a 400 nm thick surface layer (grown by molecular beam epitaxy) uniformly doped with B at a concentration of 1 × 10 20 B/cm 3 . Channelling analyses along the 〈1 0 0〉 axis using the 11 B(p, α) 8 Be reaction (at 650 keV proton energy) were used to detect the off-lattice displacements of B during irradiation. B is substitutional in the as-grown sample. During irradiation the normalized channelling yield of B χ B increases with the ion fluence and saturates at a value χ F smaller than unity, being this value independent of the energy of the irradiating beam. No change on the Si channelling yield was detected. The B displacement rate decreases with increasing the beam energy, it is controlled by the generation rate of Si self-interstitials, and it can be fitted by the following formula χ = χ F − [ χ F − χ 0 ] ∗ exp(− σ ∗ N I ), where χ 0 is the χ of the non-irradiated sample, N I is the fluence of the Si self-interstitials generated by the irradiating beam and σ is a fitting parameter that accounts for the probability for a self-interstitial to be trapped by substitutional B. Displaced B is not randomly located in the lattice and channelling analyses indicate the formation of a B complex, mediated by B i intersticialcy diffusion mechanism, partially displaced within the 〈1 0 0〉 channel." @default.
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• W2090435831 date "2006-01-01" @default.
• W2090435831 modified "2023-09-28" @default.
• W2090435831 title "Role of Si self-interstitials on the electrical de-activation of B doped Si" @default.
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• W2090435831 doi "https://doi.org/10.1016/j.nimb.2005.08.110" @default.
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