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• W2090454488 endingPage "012066" @default.
• W2090454488 startingPage "012066" @default.
• W2090454488 abstract "Removal of native oxide by conventional thermal desorption causes large scale degradation of the initial surface layer. Ga assisted oxide removal at 440−500°C has been shown to reduce damage and so-called μpit formation. We examine surfaces prepared by this technique over the 400−580°C range with dynamic reflection high-energy electron diffraction (RHEED) and in situ scanning tunnelling microscopy (STM) analysis. Surfaces with oxide clusters, pure GaAs and Ga droplets are found to exist sequentially for sub-monolayer increases in Ga deposition. The STM imaging shows that two distinct, temperature dependent cleaned surfaces exist within the prescribed range. Ga mobility is believed to underpin the mechanisms that produce each surface whilst step-edge density defines the resulting pit density." @default.
• W2090454488 created "2016-06-24" @default.
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• W2090454488 date "2010-02-01" @default.
• W2090454488 modified "2023-09-25" @default.
• W2090454488 title "Temperature dependence of Ga-assisted oxide desorption on GaAs(001)" @default.
• W2090454488 cites W1531703748 @default.
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• W2090454488 doi "https://doi.org/10.1088/1742-6596/209/1/012066" @default.
• W2090454488 hasPublicationYear "2010" @default.
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