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- W2090637468 abstract "Silicon graphoepitaxy has been achieved using a strip-heater oven and a sample configuration consisting of a relief grating in a SiO2 substrate, a deposited amorphous silicon film, and a deposited SiO2 overlayer or ’’cap.’’ The resulting films are free of cracks and superior in crystallographic orientation and surface smoothness to graphoepitaxial films produced by laser crystallization. Enhancement-mode, n-channel, insulated polysilicon gate field-effect transistors were fabricated and gave surface mobilities of 400 cm2/V sec at a p doping of 1016 cm−3. A SiO2 cap, either intentionally deposited or produced by laser crystallization in the presence of oxygen, was found to be necessary for Si graphoepitaxy. We attribute this effect to shear stresses produced by the SiO2 cap during crystallization." @default.
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- W2090637468 title "Silicon graphoepitaxy using a strip-heater oven" @default.
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- W2090637468 doi "https://doi.org/10.1063/1.91962" @default.
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