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- W2090642035 abstract "Abstract We report the effects of Al 2 O 3 interfacial layer incorporation on the dc performance of AlGaN/GaN metal‐insulator‐semiconductor field effect transistors (MIS‐HFETs) using HfO 2 as the gate dielectric and surface passivation layer. The HfO 2 /Al 2 O 3 bi‐layer MIS‐HFETs exhibit a larger maximum drain current by ∼8.5%, larger gate voltage swing by ∼6.3%, and smaller gate leakage by 4∼5 times, compared to the HfO 2 single layer MIS‐HFETs at room temperature. Furthermore, the HfO 2 /Al 2 O 3 transistors are observed to have better thermal stability than the HfO 2 transistors, and the estimated lifetime (in hour) of the former is longer than that of the latter by over an order of magnitude from 25 to 150 °C (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
- W2090642035 created "2016-06-24" @default.
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- W2090642035 date "2010-07-01" @default.
- W2090642035 modified "2023-09-23" @default.
- W2090642035 title "Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs" @default.
- W2090642035 doi "https://doi.org/10.1002/pssc.200983452" @default.
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