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- W2090717798 abstract "Ni / Al 2 O 3 / Al film was fabricated for a high performance capacitor using electrochemical etching, anodizing, and electroless-plating. The focus of this study was to form seamless and void-free Ni electrodes on Al2O3/Al with etched tunnels. The conventional deposition method of metal was limited to full-fill for the Al tunnel pits with a high aspect ratio, a depth of about 40 μm, and diameters of about 0.5–1 μm. Nevertheless, Ni filling in tunnel pits was achieved through electroless-plating for the first time, producing a seamless and void-free electrode. The authors used a polyethylene glycol solution bath to block the Pd on top of the tunnel prior to electroless-plating, which enabled the Ni to deposit preferentially at the bottom, leading to a filling from the bottom to the top. Finally, the capacitance density for the etched and Ni electroless plated films was 220 nF/cm2 while that for a film without any etch tunnel was 12.5 nF/cm2." @default.
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- W2090717798 date "2010-11-01" @default.
- W2090717798 modified "2023-10-18" @default.
- W2090717798 title "Ni full-filling into Al2O3/Al film with etched tunnels using a polyethylene glycol solution bath in electroless-plating" @default.
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- W2090717798 doi "https://doi.org/10.1116/1.3506105" @default.
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