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• W2090862425 abstract "A Raman scattering investigation has been performed on a T -type porous silicon layer using both eHHf and DAeD nm Ar laser excitations. The Raman spectrum collected using eHH f? 4light exhibits an asymmetrically broadened peak with a lower Raman shift ({/ ' DAe DU 4 ) than that for crystalline silicon ({/ ' D2f DU 4 ) while the DAe D? 4spectrum consists of a sharp peak located at a Raman shift of D2A U4 and a second broad peak at a shift of DA. SU 4 . The sharp peak in this spectrum is due to the presence of an Ar plasma line at D2H.? 4, which is a coincidence that seems to have gone unnoticed in the literature. The broad asymmetric component of the Raman spectrum excited with DAe D? 4light has a narrower linewidth and larger Raman shift than the corresponding peak in the eHH f? 4spectrum. This suggests that the nanocrystallite size increases with depth. R´ esum´ e :N ousetudions la diffusion Raman des raies a 488,0 et a 514,5 nm d'un laser Ar+ sur une couche de Si poreux de type p+ . Le spectre Raman du a la raie a 488,0 nm montre un elargissement asymetrique du pic avec un deplacement Raman plus faible ({/ ' DADc eU 4 ) que pour le Si cristallin ({/ ' D2fc DU 4 ). Pour la raie a 514,5 nm, le spectre montre un pic etroit avec un deplacement Raman de 521 cm et un second pic deplace de 517.6. Le pic etroit est du a la presence d'une raie du plasma Ar a5 28,7 nm, une coicidence qui ne semble pas avoir ete notee dans la litterature. La composante asymetrique large du spectre Raman excitee par la raie a 514,5 nm, a une largeur plus mince mais un deplacement Raman plus grand que celle excitee par la raie a 488,0 nm. Cela suggere que la dimension des nanocristallites augmente avec la profondeur dans la couche. (Traduit par la r ´" @default.
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• W2090862425 date "1997-07-07" @default.
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• W2090862425 title "Raman scattering from a p⁺-type porous silicon layer" @default.
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• W2090862425 doi "https://doi.org/10.1139/p97-002" @default.
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