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- W2090867685 abstract "Both effects of oxide and interface traps have an impact on C(V) and G(ω) curves, hence, we propose to estimate the contribution of “slow” states and “fast” states with the conductance technique in order to evaluate their contribution as a function of temperature. Silicon metal-oxide semiconductor (MOS) structures show a frequency dispersion of the equivalent conductance due to carriers recombination at interface states. We have observed on conductance measurements a contribution of “fast states” which correspond to the high-frequency peak, and a low-frequency plateau due to the influence of “slow states” on G(ω, V) curves. We propose to extract the traps distribution at each temperature, in dissociating the “slow” states and “fast” states as a function of energy in band-gap. We estimate the capture cross-section with this conductance method which is proportional to frequency. The use of the G(ω, T) technique permits a clear identification of two traps populations. These populations give a better description of “slow” and “fast” states contribution in MOS devices." @default.
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- W2090867685 date "2001-02-01" @default.
- W2090867685 modified "2023-09-27" @default.
- W2090867685 title "Rapid determination of “slow” states and “fast” states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors" @default.
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- W2090867685 doi "https://doi.org/10.1016/s1369-8001(00)00154-2" @default.
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