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- W2090889046 abstract "We present the results of low-temperature Hall measurements on 1-MeV-electron-irradiated In-doped Si. It is observed that the concentrations of the acceptor In-X, Nx, and the compensating donor ND increase immediately after irradiation with fluences ranging from 2×1015 to 1016 e/cm2. It is suggested that ND increases after irradiation due to the creation of divacancies, interstitial indium, and interstitial indium–substitutional indium pairs, where the interstitial indium atoms occupy the tetrahedral site. To explain the increase in Nx we propose three possible models for In-X in terms of indium-vacancy pairs, indium interstitials in the split configuration, or indium interstitials in the bond-centered configuration." @default.
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- W2090889046 date "1979-07-15" @default.
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- W2090889046 title "The effect of electron irradiation on the In-<i>X</i> acceptor in In-doped silicon" @default.
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- W2090889046 doi "https://doi.org/10.1063/1.91030" @default.
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