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• W2090914219 abstract "The activation kinetics and diffusion characteristics of Si+ and Be+ ions implanted into InAlAs and InGaAs were investigated for rapid thermal annealing in the temperature range 600–900 °C. The apparent activation energies for electrical activation of Be are 0.43±0.03 eV in InAlAs and 0.38±0.03 eV in InGaAs, and for Si are 0.58±0.05 eV in InAlAs and 0.64±0.06 eV in InGaAs. Higher activation efficiencies are obtained for both dopants in InGaAs relative to InAlAs and anomalously low activation for low dose Be implants is observed due to a lack of vacant sites for the Be to occupy. Extensive redistribution of Be after annealing at 750 °C, 10 s is observed in both materials, whereas Si shows no motion even for annealing at 850 °C." @default.
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• W2090914219 date "1992-01-01" @default.
• W2090914219 modified "2023-10-16" @default.
• W2090914219 title "Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation" @default.
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• W2090914219 doi "https://doi.org/10.1063/1.350745" @default.
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