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- W2090961746 abstract "At different samples of ZnSe single crystals different values of band gap Eg are found, within the range of 2.804 to 2.820 eV, by means of energy measurements of free exciton at 4.2 K. By means of subsequent, appropriate heat treatment the “normal” value 2.820 eV is obtained for all samples. On the contrary, deviations from this value are produced by a new heat treatment at 1200°C. ESR measurements with Mn2+ ion as a sensor suggest a close correlation between point defects on Se site and deviations ΔEg from “normal” band gap. The dependence of the observed effects on temperature and partial pressure during heat treatment, as well as their reversibility, lead to the conclusion that these effects are due to the native disorder with a high concentration of selenium vacancies. An unterschiedlichen Proben von ZnSe-Einkristallen werden mittels Messungen der Energie des freien Exzitons bei 4,2 K unterschiedliche Werte des Bandabstands Eg im Bereich 2,804 bis 2,820 eV gefunden. Durch nachträgliche geeignete Temperung wird bei allen Proben der “normale” Wert 2,820 eV erreicht. Umgekehrt werden Abweichungen von diesem Wert durch erneute Temperung bei 1200°C wieder erzeugt. EPR-Messungen mit dem Mn2+-Ion als Sonde weisen auf eine enge Korrelation zwischen Punktdefekten auf Se-Platz und den Abweichungen ΔEg vom “normalen” Bandabstand hin. Die Abhängigkeit der beobachteten Effekte von Temperatur und Partialdruck bei der Temperung sowie die Reversibilität ihres Auftretens machen wahrscheinlich, daß die Ursache in der Eigenfehlordnung mit hoher Selenleerstellenkonzentration zu suchen ist." @default.
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- W2090961746 date "1977-04-16" @default.
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- W2090961746 title "Influence of Preparation Conditions on the Optical Band Gap and the Mn2+ ESR Spectrum of ZnSe Single Crystals" @default.
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- W2090961746 doi "https://doi.org/10.1002/pssa.2210400224" @default.
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