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- W2090983057 abstract "High quality crack-free GaN layers were successfully grown and the InGaN/GaN based blue LEDsfabricated on patterned Si (111) substrates. In addition to using the patterned growth technique, thin AlN and SiNxinterlayers grown at high temperatures were also employed to partially release the residual stress and to furtherimprove the crystalline quality. 300 µm square blue LEDs fabricated on the islands, without thinning and package,exhibited a high output power of around 0.68 mW at a drive current of 20 mA." @default.
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- W2090983057 date "2008-11-13" @default.
- W2090983057 modified "2023-10-18" @default.
- W2090983057 title "High performance blue light-emitting diodes on patterned Si substrate" @default.
- W2090983057 doi "https://doi.org/10.1117/12.804061" @default.
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