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- W2091043983 abstract "The effect of the atomic layer deposition (ALD) HfAlO high-k dielectric on device transport properties and breakdown characteristics of an AlGaN/GaN metal?oxide?semiconductor hetero-junction field-effect transistor (MOS-HFET) was evaluated based on temperature-dependent measurements. It was found that the MOS-HFET device with a HfAlO gate dielectric shows high-channel mobility greater than the Schottky HFET device for the measured temperature range (25?150??C). In the case of off-state breakdown characteristics, the MOS-HFET device greatly suppressed gate leakage currents for measured temperatures (25?200??C) resulting in improvements in off-state breakdown characteristics. In contrast, large gate/drain leakage currents were observed for the Schottky HFET device at high temperature (>100??C) resulting in about 200?V of breakdown voltage reduction. It was also found that the ALD HfAlO layer reduced surface leakage current by passivating the GaN surface effectively. Therefore, the MOS-HFET structure with the HfAlO gate dielectric is very attractive for GaN-based high-power and high-temperature device applications." @default.
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- W2091043983 date "2013-06-21" @default.
- W2091043983 modified "2023-10-18" @default.
- W2091043983 title "Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-kdielectric" @default.
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- W2091043983 doi "https://doi.org/10.1088/0268-1242/28/7/074016" @default.
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