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• W2091088093 abstract "The evolution of HfO 2 (3–5 nm)/SiO 2 (0.5 nm)/Si(1 0 0) stacks during vacuum annealing was monitored in situ with the combination of X-ray photoelectron spectroscopy and low energy ion scattering techniques and supplemented with atomic force microscopy analysis to investigate the mechanism that triggers HfO 2 degradation with Hf silicide formation. The reduction of SiO 2 interfacial layer and the formation of local paths for SiO escape into vacuum are believed to be critical at vacuum annealing above T > 850 °C for the reaction between HfO 2 and Si to start and eventually lead to the degradation of the former." @default.
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• W2091088093 date "2007-04-01" @default.
• W2091088093 modified "2023-09-23" @default.
• W2091088093 title "Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM" @default.
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• W2091088093 doi "https://doi.org/10.1016/j.microrel.2007.01.071" @default.
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