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- W2091218564 abstract "Abstract In this work, we investigated the effect of p- and n-type dopant atoms (boron and phosphorus) on two- and one-step Ni metal-induced crystallization (MIC) of amorphous Si in the aspects of crystallization rate and crystal quality with XRD, SIMS and sheet resistance measurements. The two- and one-step MIC techniques were first applied to fabricate p + /n and n + /p junction diodes on single-crystalline Si substrates below 500 °C and we compared those with the diodes formed by the solid phase crystallization technique at 750 °C, in order to demonstrate the feasibility of the low-temperature MIC junction diodes for source/drain of p- and n-channel single-crystalline Si TFTs." @default.
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- W2091218564 date "2012-05-30" @default.
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- W2091218564 title "Characteristics of metal-induced crystallization/dopant activation and its application to junction diodes on single-crystalline silicon" @default.
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- W2091218564 doi "https://doi.org/10.1088/0022-3727/45/24/245104" @default.
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