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- W2091219219 abstract "In this article, we demonstrate the concept of scattering masks for ion-beam proximity lithography. In this process, stencil mask openings are fabricated with larger-than-nominal sizes and are coated with a conformal scatter layer that reduces the size of the features at the mask surface. The process reduces the complexity of etching high aspect-ratio mask openings. Printed images of masks with 100 and 40 nm circular openings, fabricated from masks with 225 nm openings, are shown. The printing process has excellent exposure latitude: less than a 20% change in critical dimension is observed for a 33% change in dose for 40 nm structures. We show that the diffuse background exposure that results from ions traversing through the scatter layer is around 0.1% of the primary exposure for a 2 μm pitch pattern." @default.
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- W2091219219 date "2002-11-01" @default.
- W2091219219 modified "2023-09-26" @default.
- W2091219219 title "Scattering mask concept for ion-beam nanolithography" @default.
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- W2091219219 doi "https://doi.org/10.1116/1.1520568" @default.
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