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• W2091224902 abstract "The source of the leakage current in polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) made by Ni-mediated crystallization has been investigated. Studies of TFTs and of the crystallization process by in situ transmission electron microscopy show that the crystallization process is a two-stage process and that the cause of the leakage problem is associated with incomplete crystallization of amorphous-Si. By removing the last pockets of amorphous-Si, for instance, by long anneals, poly-Si TFTs can be made with adequately low leakage current &lt;1 pA/μm (at a source–drain voltage of 5 V) for display applications, despite the presence of Ni up to 2.5×1019 atoms/cm3." @default.
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• W2091224902 date "2002-10-22" @default.
• W2091224902 modified "2023-09-23" @default.
• W2091224902 title "Explanation for the leakage current in polycrystalline-silicon thin-film transistors made by Ni-silicide mediated crystallization" @default.
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• W2091224902 doi "https://doi.org/10.1063/1.1517406" @default.
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