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- W2091230243 abstract "Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /Vs is also demonstrated." @default.
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- W2091230243 date "2010-11-01" @default.
- W2091230243 modified "2023-09-25" @default.
- W2091230243 title "High-mobility defect-free ge single-crystals by rapid melting growth on insulating substrates" @default.
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- W2091230243 doi "https://doi.org/10.1109/icsict.2010.5667440" @default.
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