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- W2091254308 abstract "We have discovered that a thin film of SiO2 can be directly reduced to Si under electron beam irradiation. The application of this effect to the fabrication of nanometer-sized Si dots and wires is demonstrated. In particular, if SiO2 is irradiated with a high intensity 100 keV electron beam of nanometer scale, then a column of Si is formed which can be as small as 2 nm in diameter. If the beam is moved in a straight line, then a very thin wire of Si is formed. These columns and wires are formed directly under electron irradiation with a dose of ≥3×109 C m−2 and no resists or chemical development are required." @default.
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- W2091254308 date "1993-04-19" @default.
- W2091254308 modified "2023-10-18" @default.
- W2091254308 title "Novel fabrication method for nanometer-scale silicon dots and wires" @default.
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- W2091254308 doi "https://doi.org/10.1063/1.109500" @default.
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