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• W2091305354 abstract "We performed an X-ray photoelectron spectroscopy (XPS) depth-profiling study on the materials used in amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs) with Ti and Mo source/drain (S/D) electrodes. The XPS results suggested that there are some differences between the interface regions of Ti/a-IGZO and Mo/a-IGZO for different chemical states of the materials. The chemical states of the back-channel surfaces were also found to be different between the TFTs with Ti and Mo S/D electrodes. In addition, we fabricated indium–gallium–zinc–titanium oxide composite thin films by deposition using multitarget co-sputtering. The electronic structure of these films observed by XPS is similar to that of the Ti/a-IGZO interface region. The fabricated films were found to have a very low resistivity, much lower than that of an a-IGZO film using typical TFT fabrication processes." @default.
• W2091305354 created "2016-06-24" @default.
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• W2091305354 date "2013-03-01" @default.
• W2091305354 modified "2023-09-28" @default.
• W2091305354 title "Depth-Profiling Study on Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors by X-ray Photoelectron Spectroscopy" @default.
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• W2091305354 doi "https://doi.org/10.7567/jjap.52.03bb03" @default.
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