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- W2091534288 abstract "Abstract Schottky barrier Ta2O5/Ta/GaAs structures produced by RF magnetron sputtering of Ta onto “in situ” sputter etched GaAs substrates are the subject of the present investigation. The tantalum oxides formed directly during the process of thermal recovery of the structures contain predominantly Ta2O5 according to XPS data. The component distribution in these structures, formed under optimum recovery conditions with respect to the Schottky barrier parameters (ΦB and η) has been studied by XPS and TEM. The applied conditions for thermal recovery and simultaneous oxidation are: isothermal annealing at temperatures 400–420°C for 100 min in an ambient of dry air and starting layers of 40 nm RF-sputtered Ta. The partial oxidation of the Ta layer during the heat treatment results in the formation of a thin layer of Ta2O5 on the top of the structure, followed by two layers: a mixture of Ta2O5 + Ta and a thin Schottky contact predominantly consisting of Ta. The total optical transmittance in the spectral range 0.7-1.1 μ of these three successive layers is ≥ 0.7. This result justifies the potential application of these structures in the creation of Schottky photodiodes in the visible and near-IR. It is established as well that at T ≥ 400°C GaAs and Ta start interacting resulting in the formation of intermetallic compounds of the type: Ta5Ga, Ta5Ga3, and TaGa3." @default.
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- W2091534288 date "1992-01-01" @default.
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- W2091534288 title "Characterization of thermally oxidized Ta/GaAs Schottky barrier structures prepared by low energy RF sputtering with X-ray photoemission, TEM and optical transmittance measurements" @default.
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- W2091534288 doi "https://doi.org/10.1016/0169-4332(92)90116-f" @default.
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