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• W2091618511 abstract "In this paper we provide a detailed physical and electrical characterization of Germanium Telluride compounds (GexTe100−x) targeting phase-change memory applications. Thin films of Germanium-rich as well as Tellurium-rich phase-change materials are deposited for material analysis (XRD, resistivity and optical characterization). GexTe100−x compounds are then integrated in lance-type analytical phase-change memory devices allowing for a thorough analysis of the switching characteristics, data retention and endurance performances. Tellurium-rich GeTe alloys exhibit stable programming characteristics and can sustain endurance up to 107 cycles, while Germanium-rich compounds show an unstable RESET state during repeated write/erase cycles, probably affected by Ge segregation. Finally we demonstrate that data retention is strongly improved departing from Ge50Te50 stoichiometric composition." @default.
• W2091618511 created "2016-06-24" @default.
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• W2091618511 date "2013-11-01" @default.
• W2091618511 modified "2023-10-18" @default.
• W2091618511 title "Material engineering of GexTe100−x compounds to improve phase-change memory performances" @default.
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• W2091618511 doi "https://doi.org/10.1016/j.sse.2013.07.005" @default.
• W2091618511 hasPublicationYear "2013" @default.
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