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- W2091709185 abstract "Lattice matched GaInP/GaAs heterostructures were grown by atmospheric pressure-metal organic vapor phase epitaxy (AP-MOVPE). Compositional intermixing of As/P and Ga/In near the heterointerfaces was studied by photoluminescence (PL) spectroscopy. Indium segregation, memory effect of In into GaAs and the carry-over of As in the GaInP layer during the growth process were considered as three major factors giving rise to the anomalous emissions in the PL spectra. Both thermal annealing and zinc doping strongly enhanced the compositional interdiffusion near the heterointerfaces." @default.
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- W2091709185 date "1994-12-01" @default.
- W2091709185 modified "2023-09-27" @default.
- W2091709185 title "Optical and Structural Properties of AP-MOVPE GaInP/GaAs Heterostructures" @default.
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- W2091709185 doi "https://doi.org/10.1088/0256-307x/11/12/018" @default.
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