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• W2091734095 abstract "A nitrogen-doped single crystal diamond plate with a low dislocation density is fabricated by chemical vapor deposition (CVD) from a high pressure high temperature synthetic type IIa seed substrate by ion implantation and lift-off processes. To avoid sub-surface damage, the seed surface was subjected to deep ion beam etching. In addition, we introduced a nitrogen flow during the CVD step to grow low-strain diamond at a relatively high growth rate. This resulted in a plate with low birefringence and a dislocation density as low as 400 cm−2, which is the lowest reported value for a lift-off plate. Reproducing this lift-off process may allow mass-production of single crystal CVD diamond plates with low dislocation density and consistent quality." @default.
• W2091734095 created "2016-06-24" @default.
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• W2091734095 date "2014-06-23" @default.
• W2091734095 modified "2023-10-15" @default.
• W2091734095 title "A nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by a lift-off process" @default.
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• W2091734095 doi "https://doi.org/10.1063/1.4885552" @default.
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