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- W2091768670 abstract "The broad photoluminescence band with a maximum at about 2.9 eV widely observed in undoped epitaxial GaN is studied as a function of temperature and excitation intensity. We attribute the band to transitions from a shallow donor to a deep localized acceptor. The zero-phonon transition for this band is at 3.098 eV as determined from the fine structure at low temperatures. A local vibrational mode in the ground state with an energy of 36 meV is found." @default.
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- W2091768670 date "2000-04-01" @default.
- W2091768670 modified "2023-09-24" @default.
- W2091768670 title "Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers" @default.
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- W2091768670 doi "https://doi.org/10.1063/1.372348" @default.
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