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• W2091773315 abstract "Low-temperature fabrication of polycrystalline silicon (poly-Si) thin film has been performed by Al-induced crystallization (AIC), and the structural properties have been investigated. In our experiments, to prevent native oxidation of Al film, an amorphous silicon (a-Si)/Al bilayer was formed on the SiO 2 /Si substrate by electron beam evaporation without breaking the vacuum. The a-Si/Al/SiO 2 /Si structure was then heated at a low temperature of 400°C to induce AIC. It was confirmed that layer exchange of the a-Si/Al bilayer is induced even though there is no native oxidation of Al film, which was demonstrated by scanning transmission electron microscopy and energy dispersive X-ray analysis. The mechanism for layer exchange of the a-Si/Al bilayer has been discussed. Furthermore, it was verified by scanning electron microscopy and spectroscopic ellipsometry that the a-Si/Al thickness ratio of roughly 1:1 is suitable to achieve a flat surface morphology of poly-Si. In addition, it was found, by X-ray diffraction and orientation imaging microscopy, that the Si(111)-oriented grain becomes dominant with decreasing thickness of the a-Si/Al bilayer." @default.
• W2091773315 created "2016-06-24" @default.
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• W2091773315 date "2005-07-01" @default.
• W2091773315 modified "2023-10-16" @default.
• W2091773315 title "Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface" @default.
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• W2091773315 doi "https://doi.org/10.1143/jjap.44.4770" @default.
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