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• W2091777906 abstract "We report on two different, but well defined, behaviors of resistivity vs temperature in amorphous SiC:H films deposited from $({mathrm{SiH}}_{4}{+mathrm{C}}_{2}{mathrm{H}}_{2})$ gas mixture. The electrical resistivity shows in the range 400--500 K curves with jumps or peaks both increasing and decreasing temperature. The electrical properties of the samples are restorable even if not exactly reversible. The evolution of the structure was observed by x-ray diffraction at the beginning and at the end of the heating run. A simple phenomenological model is presented to interpret these results, introducing both the bond length and angle and their variation with temperature, in a network with a high content of voids." @default.
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• W2091777906 date "2000-07-15" @default.
• W2091777906 modified "2023-10-02" @default.
• W2091777906 title "Electrical resistivity ofa-SiC:H as a function of temperature: Evidence for discontinuities" @default.
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• W2091777906 doi "https://doi.org/10.1103/physrevb.62.1801" @default.
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