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- W2091799782 abstract "Abstract The (3 1 1)A and (5 1 1)A planes of GaAs were used for the growth of high-quality two-dimensional hole gas (2DHG) and electron gas (2DEG) structures, respectively. A back-gated, inverted interface, AlGaAs/GaAs structure in which a 2DHG or a 2DEG was embedded was studied. This particular structure enabled the two-dimensional carrier concentration to be varied over two orders of magnitude in a single device, as well as the measurement of extremely low carrier densities in the mid 109 cm−2 range. The remarkably low carrier concentration we were able to achieve in both a 2DHG and a 2DEG opens new frontiers for the study of mesoscopic phenomena governed by Coulomb interactions between carriers, in particular, the possible existence of a Wigner crystal." @default.
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- W2091799782 date "1999-05-01" @default.
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- W2091799782 title "Superior molecular beam epitaxy (MBE) growth on (N11)A GaAs" @default.
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- W2091799782 doi "https://doi.org/10.1016/s0022-0248(98)01326-8" @default.
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