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- W2091800312 abstract "Near-IR femtosecond (τ = 150 fs, λ=775 nm, repetition rate 1 kHz) and VUV nanosecond (τ = 20 ns, λ=157 nm,repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2, grown by the balance controlledCzochalski growth method) surfaces was performed in air using the direct focusing technique. The multi-methodcharacterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed thesurface morphology of the ablated craters. This allowed us to characterize precisely the lateral and vertical dimensions ofthe laser-ablated craters for different laser pulse energies and pulse numbers at each spot. Based on the obtainedinformation, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulsenumbers were applied to the same spot by using two independent extrapolation techniques. We found that in case of NIRfemtosecond laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied tothe same spot indicating that incubation effects play an important role in this material. In case of VUV ns laser pulses,the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in thematerial. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics." @default.
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- W2091800312 date "2010-02-11" @default.
- W2091800312 modified "2023-09-23" @default.
- W2091800312 title "Near-IR femtosecond and VUV nanosecond laser processing of TeO 2 crystals" @default.
- W2091800312 doi "https://doi.org/10.1117/12.845074" @default.
- W2091800312 hasPublicationYear "2010" @default.
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